Qled device and manufacturing method thereof, qled display panel and qled display device
AssigneeBoe Technology Group Co., Ltd.
InventorsWenhai MEI, Zhuo CHEN, Yuanming ZHANG
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Abstract
A QLED device and manufacturing method thereof, a QLED display panel and a QLED display device are disclosed which improve the surface and internal structure of the quantum dot layer in the QLED devices. The method for manufacturing a QLED device includes forming a first electrode layer; forming a quantum dot layer on the first electrode layer; infiltrating a mixed solvent containing a bifunctional molecule into the quantum dot layer so as to improve the structure of the quantum dot layer; and forming a second electrode layer on the quantum dot layer.
Claims20
A method for manufacturing a QLED device, comprising:
- forming a first electrode layer;
- forming a quantum dot layer on the first electrode layer;
- infiltrating a mixed solvent containing a bifunctional molecule into the quantum dot layer so as to improve the structure of the quantum dot layer;
- and
- forming a second electrode layer on the quantum dot layer.
A QLED device, comprising:
- a first electrode layer, a quantum dot layer and a second electrode layer stacked sequentially;
- wherein the quantum dot layer comprises a bifunctional molecule.
Dependencies are inferred from the claim text.