Direct formation porous materials for electronic devices

Abstract

A method for forming an electronic device may comprising the steps of selecting a substrate for an electronic device, and depositing a porous film utilizing physical vapor deposition, dry deposition, evaporative deposition, e-beam evaporation, plasma enhanced chemical vapor deposition, or atomic layer deposition. In some embodiments, a deposition rate, temperature, pressure, or combination thereof may be carefully controlled during deposition to generate the porous film. Further, the depositing of the porous film occurs without the need for further processing. Additional steps may also include depositing an additional layer for the electronic device. In some case, the method may also include depositing and/or patterning a secondary electronic device on top or below the first electronic device.

Dependencies are inferred from the claim text.