Sidewall-Type Memory Cell

A cell for a resistive memory, comprising:

• a bottom electrode extending generally horizontally with respect to a horizontal substrate;
• an electrolyte layer formed over the bottom electrode, the electrolyte layer having a non-horizontally extending sidewall region and a horizontally extending upper region;
• a top electrode layer extending over the bottom electrode and including (a) a non-horizontally-extending sidewall region formed on the non-horizontally extending sidewall region of the electrolyte layer and (a) a horizontally-extending upper region formed on the horizontally-extending upper region of the electrolyte layer;
• wherein the non-horizontally-extending sidewall region includes a laterally outward portion located laterally outwardly from a lateral edge of the bottom electrode;
• wherein the respective arrangement of the bottom electrode, electrolyte layer, and top electrode layer define a conductive path between the bottom electrode and the non-horizontally-extending sidewall region of the top electrode layer via the non-horizontally extending sidewall region of the electrolyte layer.

A cell for a resistive memory, comprising:

• a bottom electrode formed over a substrate;
• a top electrode layer including:
• (a) a non-horizontally-extending sidewall region having a non-horizontal surface facing the bottom electrode, and
• (b) a horizontally-extending upper region extending over the bottom electrode;
• and
• an electrolyte layer located between the bottom electrode and top electrode layer;
• wherein at least a portion of the non-horizontally-extending sidewall region of the top electrode is located laterally outwardly from a lateral edge of the bottom electrode;
• and
• wherein the respective arrangement of the bottom electrode, electrolyte layer, and top electrode layer define a conductive path between the bottom electrode and the laterally outward portion of the non-horizontally-extending sidewall region of the top electrode layer via the electrolyte layer.

A method, comprising:

• forming a sidewall-type resistive memory cell, the method comprising:
• forming a bottom electrode over a substrate;
• forming an electrolyte layer over the bottom electrode;
• and
• forming a top electrode layer including:
• (a) a non-horizontally-extending sidewall region having a non-horizontal surface adjacent the electrolyte layer and facing the bottom electrode, and
• (b) a horizontally-extending upper region extending over the bottom electrode;
• and
• wherein at least a portion of the non-horizontally-extending sidewall region of the top electrode is located laterally outwardly from a lateral edge of the bottom electrode;
• and
• wherein the respective arrangement of the bottom electrode, electrolyte layer, and top electrode layer define a conductive path between the bottom electrode and the non-horizontally-extending sidewall region of the top electrode layer via the non-horizontally extending sidewall region of the electrolyte layer.