Light emitting diode for surface mount technology, method of manufacturing the same, and method of manufacturing light emitting diode module

A light emitting diode, comprising:

• a first conductive type semiconductor layer;
• a mesa disposed on the first conductive type semiconductor layer, the mesa comprising an active layer and a second conductive type semiconductor layer;
• an electrode disposed on the mesa and configured to be in ohmic-contact with the corresponding second conductive type semiconductor layer of the mesa;
• a current spreading layer disposed on the mesa and the electrode, the current spreading layer comprising:
• a first portion configured to be in ohmic-contact with a first end portion of the first conductive type semiconductor layer;
• a second portion configured to be in ohmic-contact with a second end portion of the first conductive type semiconductor layer;
• and
• a third portion configured to be in ohmic-contact with a middle portion of the first conductive type semiconductor layer disposed between the first and second end portions of the first conductive type semiconductor layer;
• and
• an insulation layer disposed on the mesa and the first conductive type semiconductor layer,
• wherein the insulation layer comprises a first region having a thickness that varies along a longitudinal direction of the first semiconductor layer.