Control of p-contact resistance in a semiconductor light emitting device
AssigneeLumileds LLC
InventorKwong-Hin Henry Choy
Life of this patent
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Abstract
A device according to embodiments of the invention includes a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A surface of the p-type region perpendicular to a growth direction of the semiconductor structure includes a first portion and a second portion. The first portion is less conductive than the second portion. The device further includes a p-contact formed on the p-type region. The p-contact includes a reflector and a blocking material. The blocking material is disposed over the first portion and no blocking material is disposed over the second portion.
Claims17
A method comprising:
- partially activating the p-type region in a III-nitride structure comprising a light emitting layer disposed between an n-type region and a p-type region;
- after partially activating the p-type region, forming a metal p-contact on the p-type region, the metal p-contact comprising:
- a reflective first metal;
- and
- a second metal;
- and
- after forming the metal p-contact, further activating the p-type region.
A device comprising:
- a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region, wherein a surface of the p-type region comprises a first portion and a second portion, wherein the surface is perpendicular to a growth direction of the semiconductor structure, wherein the first portion is less conductive than the second portion;
- and
- a p-contact formed on the p-type region, the p-contact comprising:
- a reflective first metal;
- and
- a second metal,
- the first metal being embedded in the second metal.
A device comprising:
- a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region, wherein a surface of the p-type region comprises a first portion and a second portion, wherein the surface is perpendicular to a growth direction of the semiconductor structure, wherein the first portion is less conductive than the second portion;
- and
- a p-contact formed on the p-type region, the p-contact comprising:
- a reflective first metal;
- and
- a second metal,
- the first metal being disposed between the second metal and the p-type region.
Dependencies are inferred from the claim text.