Photoelectric conversion device and method for manufacturing same

A photoelectric conversion device, comprising:

• a semiconductor substrate comprising a first principal surface;
• a first conductivity-type semiconductor layer;
• a second conductivity-type semiconductor layer;
• a first electrode;
• a second electrode;
• and
• an insulating layer,
• wherein the first principal surface of the semiconductor substrate comprises a first conductivity-type region, a second conductivity-type region, and a boundary region, the boundary region being in contact with and separates the first conductivity-type region and the second conductivity-type region,
• wherein the first conductivity-type semiconductor layer is disposed over the entire first conductivity-type region and extends over the boundary region,
• wherein the second conductivity-type semiconductor layer is disposed over the entire second conductivity-type region and extends over the boundary region, the second conductivity-type semiconductor layer having a conductivity-type opposite to a conductivity-type of the first conductivity-type semiconductor layer,
• wherein the first electrode is disposed over the entire first conductivity-type region and extends over the boundary region,
• wherein the second electrode is disposed over the second conductivity-type region and is separated from the first electrode,
• wherein the insulating layer is disposed over the entire boundary region,
• wherein, in the following order from the semiconductor substrate, the first conductivity-type semiconductor layer and the first electrode are stacked on the semiconductor substrate in the first conductivity-type region,
• wherein, in the following order from the semiconductor substrate, the second conductivity-type semiconductor layer and the second electrode are stacked on the semiconductor substrate in the second conductivity-type region,
• wherein, in the following order from the semiconductor substrate, the second conductivity-type semiconductor layer, the insulating layer, the first conductivity-type semiconductor layer, and the first electrode are stacked on the semiconductor substrate in the boundary region,
• wherein a lateral surface of the insulating layer on a first conductivity-type region-side is covered with the first conductivity-type semiconductor layer and a lateral surface of the insulating layer on a second conductivity-type region-side is covered with neither the first conductivity-type semiconductor layer nor the second conductivity-type semiconductor layer, and
• wherein the second electrode is not disposed over a region where the first conductivity-type semiconductor layer is disposed.