Optical waveguide detector and optical module

An optical apparatus, comprising a processing circuit and an optical waveguide detector, wherein:

• the optical waveguide detector is configured to convert an optical signal into an electrical signal, and the processing circuit is configured to process the electrical signal obtained by the optical waveguide detector;
• wherein the optical waveguide detector comprises:
• a waveguide layer, an upper cladding layer, and an electrode layer that are stacked in a first direction, wherein the upper cladding layer is located between the waveguide layer and the electrode layer;
• wherein the waveguide layer comprises a silicon waveguide layer and a germanium waveguide layer, and the germanium waveguide layer is located between the silicon waveguide layer and the upper cladding layer;
• wherein the silicon waveguide layer comprises a P-type heavily silicon-doped area, a P-type lightly silicon-doped area, an N-type lightly silicon-doped area, and an N-type heavily silicon-doped area that are arranged in a second direction, the P-type lightly silicon-doped area is located between the P-type heavily silicon-doped area and the N-type lightly silicon-doped area, the N-type lightly silicon-doped area is located between the P-type lightly silicon-doped area and the N-type heavily silicon-doped area, and the second direction is perpendicular to the first direction;
• wherein the germanium waveguide layer comprises a first heavily germanium-doped area and a germanium-undoped area, a first surface of the germanium waveguide layer comprises a surface of the first heavily germanium-doped area, the first surface is a surface of the germanium waveguide layer away from the silicon waveguide layer in the first direction, a width of the first heavily germanium-doped area is greater than 0 and less than or equal to half a width of the first surface, and a thickness of the first heavily germanium-doped area is greater than or equal to 5 nm and less than or equal to 200 nm;
• and
• wherein the upper cladding layer comprises a first metal through-hole, and the first metal through-hole connects the first heavily germanium-doped area to the electrode layer.