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US 2018/0294362 A1Published application
Tunnel field effect transistor
AssigneesNational University Corporation Hokkaido University, Japan Science and Technology Agency
InventorsTakashi FUKUI, Katsuhiro TOMIOKA
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Abstract
The tunnel field effect transistor according to the present invention has: a channel; a source electrode connected directly or indirectly to one end of the channel; a drain electrode connected directly or indirectly to the other end of the channel; and a gate electrode for causing an electric field to act on the channel, generating a tunnel phenomenon at the source electrode-side joint part of the channel, and simultaneously generating a two-dimensional electron gas in the channel.
Claims5
A tunnel-field-effect transistor comprising:
- a channel;
- a source electrode directly or indirectly connected with one end of the channel;
- a drain electrode directly or indirectly connected with another end of the channel;
- and
- a gate electrode configured to operate such that an electric field acts on the channel to cause tunneling at a junction of the channel on the source electrode side while generating two-dimensional electron gas at the channel.
2 more elements
Dependencies are inferred from the claim text.