Top-gate thin film transistor, manufacturing method thereof, array substrate and display panel comprising top-gate thin film transistor
AssigneeBoe Technology Group Co., Ltd.
InventorsJianye Zhang, Wei Li, Xing Zhang
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Abstract
The present disclosure provides a top-gate thin film transistor, a manufacturing method thereof, and an array substrate and a display panel each comprising the top-gate thin film transistor. The top-gate thin film transistor comprises a light-shielding layer formed between the base substrate and the active layer and made of a non-metallic material. The non-metallic material may be a silicone material, such as a polyhedral oligomeric silsesquioxane or a linear silicone resin.
Claims20
A top-gate thin film transistor, comprising a light-shielding layer formed between a base substrate and an active layer and made of a non-metallic material.
A method for manufacturing a top-gate thin film transistor, comprising steps of:
- forming a light-shielding layer made of a non-metallic material on a base substrate;
- and
- forming an active layer on the light-shielding layer.
Dependencies are inferred from the claim text.