Semiconductor device and a method of fabricating the same
AssigneeUnited Microelectronics Corp.
InventorsTzu-Ping Chen, Chien-Hung Chen
Life of this patent
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Abstract
A semiconductor device includes a semiconductor substrate, a tunnel dielectric disposed on the semiconductor substrate, a floating gate disposed on the tunnel dielectric, a control gate disposed on the floating gate, and an insulation layer disposed between the floating gate and the control gate. The semiconductor device further includes a spacer continuously distributed on the sidewall surfaces of the floating gate and the control gate, and the spacer overlaps portions of the top surface of the floating gate.
Claims15
A semiconductor device, comprising:
- a semiconductor substrate;
- a tunnel dielectric, disposed on the semiconductor substrate;
- a floating gate, disposed on the tunnel dielectric, wherein the floating gate comprises a top surface and a sidewall surface;
- a control gate, disposed on the floating gate, wherein the control gate comprises a sidewall surface;
- an insulation layer, disposed between the floating gate and the control gate;
- and
- a spacer, continuously distributed on the sidewall surfaces of the floating gate and the control gate, wherein the spacer overlaps portions of the top surface of the floating gate, and a surface of the spacer above the floating gate comprises a recess filled with a dielectric layer.
(canceled)
A method for fabricating a semiconductor device, comprising:
- providing a semiconductor substrate;
- forming a tunnel dielectric on the semiconductor substrate;
- forming a floating gate on the tunnel dielectric, wherein the floating gate comprises a top surface and a sidewall surface;
- forming an insulation layer, conformally disposed on the top surface and the sidewall surface of the floating gate;
- forming a control gate, disposed on the insulation layer and the floating gate, wherein the control gate comprises a sidewall surface;
- and
- forming a spacer, continuously distributed on the sidewall surfaces of the floating gate and the control gate, wherein the spacer overlaps portions of the top surface of the floating gate.
Dependencies are inferred from the claim text.