Thin film transistors and the manufacturing methods thereof, and array substrates
AssigneeShenzhen China Star Optoelectronics Technology Co., Ltd.
InventorZiran LI
Life of this patent
Estimating the term…
Loading patent…
AssigneeShenzhen China Star Optoelectronics Technology Co., Ltd.
InventorZiran LI
Estimating the term…
The present disclosure relates to a TFT including a gate on a substrate; a gate insulation layer on the substrate and the gate, and a surface of the gate insulation layer being applied with a flattening process; an oxygen-rich layer on the gate insulation layer; an active layer on the oxygen-rich layer; a source and a drain on the active layer; and a passivation layer on the active layer, the source, and the drain. In addition, the present disclosure also relates to a manufacturing method of the TFTs and the array substrate having the TFTs. By applying the flattening process to the surface of the gate insulation layer and by forming the oxygen-rich layer on the gate insulation layer, the surface of the gate insulation layer is smooth so as to eliminate the oxygen vacancy defects on the surface of the gate insulation layer. Thus, the surface state of the gate insulation layer is stable.
A thin film transistor (TFT), comprising:
An array substrate, comprising:
A manufacturing method of TFTs, comprising:
Dependencies are inferred from the claim text.