Formation method and structure of semiconductor device with source/drain structures
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShahaji B. MORE, Zheng-Yang PAN, Chun-Chieh WANG, Cheng-Han LEE, Shih-Chieh CHANG
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Abstract
Structures and formation methods of a semiconductor device are provided. The semiconductor device structure includes a substrate and a gate structure over the substrate. The semiconductor device structure also includes a source/drain structure near the gate structure. The source/drain structure has an inner portion and an outer portion surrounding an entirety of the inner portion. The inner portion has a greater average dopant concentration than that of the outer portion.
Claims20
A semiconductor device structure, comprising:
- a semiconductor substrate;
- a gate structure over the semiconductor substrate;
- and
- a source/drain structure near the gate structure, wherein the source/drain structure comprises:
- a first semiconductor region;
- a second semiconductor region over the first semiconductor region;
- a third semiconductor region over the second semiconductor region, wherein the second semiconductor region is separated from a sidewall surface of the source/drain structure by the first semiconductor region, and the second semiconductor region has a greater average dopant concentration than that of the first semiconductor region and that of the third semiconductor region.
A semiconductor device structure, comprising:
- a substrate;
- a gate structure over the substrate;
- and
- a source/drain structure near the gate structure, wherein the source/drain structure has an inner portion and an outer portion surrounding an entirety of the inner portion, the inner portion has a greater average dopant concentration than that of the outer portion.
A method for forming a semiconductor device structure, comprising:
- forming a gate structure over a semiconductor material;
- partially removing the semiconductor material to form a recess near the gate structure;
- forming a first semiconductor region over a bottom surface and sidewalls of the recess;
- forming a second semiconductor region over the first semiconductor region, wherein the second semiconductor region is separated from the sidewalls of the recess by the first semiconductor region;
- and
- forming a third semiconductor region over the second semiconductor region, wherein the second semiconductor region has a greater average dopant concentration than that of the first semiconductor region and the third semiconductor region.
Dependencies are inferred from the claim text.