Method and structure of improving contact resistance for passive and long channel devices
AssigneeInternational Business Machines Corporation
InventorsInjo Ok, Soon-Cheon Seo, Balasubramanian Pranatharthiharan, Charan V. V. S. Surisetty
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a gate arranged on a substrate; a source/drain formed on the substrate adjacent to the gate; a source/drain contact extending from the source/drain and through an interlayer dielectric (ILD) over the source/drain, a portion of the source/drain positioned adjacent to the source/drain contact; and a silicide positioned along a sidewall of the source/drain contact between the portion of the source/drain and the source/drain contact, and along an endwall of the source/drain contact between the source/drain contact and the substrate.
Claims20
A method of making a semiconductor device, the method comprising:
- removing a first dummy gate of a plurality dummy gates to form a contact trench, the contact trench being arranged between an active gate and a second dummy gate of the plurality of dummy gates, the contact trench extending from a source/drain and through an interlayer dielectric (ILD) over the source/drain, a portion of the source/drain positioned between the second dummy gate and the contact trench and another portion of the source/drain positioned between the active gate and the contact trench, and the source/drain contacting a bottom sidewall of the contact trench;
- and
- depositing a conductive material in contact trench to form a source/drain contact between the active gate and the second dummy gate.
A method of making a semiconductor device, the method comprising:
- removing a first dummy gate of a plurality dummy gates to form a contact trench, the contact trench being arranged between an active gate and a second dummy gate of the plurality of dummy gates, the contact trench extending from a source/drain and through an interlayer dielectric (ILD) over the source/drain, a portion of the source/drain positioned between the second dummy gate and the contact trench and another portion of the source/drain positioned between the active gate and the contact trench, and the source/drain contacting a bottom sidewall of the contact trench;
- and
- forming a silicide liner along the sidewall of the trench that is in contact with the source/drain.
Dependencies are inferred from the claim text.