High voltage pmos (hvpmos) transistor with a composite drift region and manufacture method thereof
AssigneeSilergy Semiconductor Technology (Hangzhou) LTD
InventorChenggong Han
Life of this patent
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Abstract
In one embodiment, method of making a high voltage PMOS (HVPMOS) transistor, can include: (i) providing a P-type substrate; (ii) implanting N-type dopants in the P-type substrate; (iii) dispersing the implanted N-type dopants in the P-type substrate to form a deep N-type well; (iv) implanting P-type dopants of different doping concentrations in the deep N-type well along a horizontal direction of the deep N-type well; and (v) dispersing the implanted P-type dopants to form a composite drift region having an increasing doping concentration and an increasing junction depth along the horizontal direction of the deep N-type well.
Claims21
1-15. (canceled)
A high voltage MOS (HVMOS) transistor, comprising:
- a) a semiconductor layer;
- and
- b) a composite drift region having a first doping type in said semiconductor layer;
- c) wherein both a doping concentration and a junction depth of said composite drift region progressively increase along a first direction extending from a gate contact to a drain contact of said HVMOS transistor.
A method of making a high voltage MOS (HVMOS) transistor, the method comprising:
- a) providing a semiconductor layer;
- b) implanting first doping type dopants of different doping concentrations in said semiconductor layer along a first direction extending from a gate contact to a drain contact of said HVMOS transistor;
- and
- c) dispersing said implanted first doping type dopants to form a composite drift region having an increasing doping concentration and an increasing junction depth along said first direction.
Dependencies are inferred from the claim text.