High-electron-mobility transistor and manufacturing method thereof

A method of manufacturing a semiconductor device, comprising:

• providing a substrate;
• forming a semiconductor layer over the substrate;
• forming a gate structure over the semiconductor layer;
• forming a passivation layer over the gate structure and the semiconductor layer;
• forming an opening in the passivation layer;
• forming a drain by blanket depositing a conductive layer over the gate structure, the passivation layer, and the opening.

A method of manufacturing a semiconductor device, comprising:

• receiving a substrate;
• forming a semiconductor layer over the substrate;
• forming a gate structure over the semiconductor layer;
• forming a passivation layer over the gate structure and the semiconductor layer;
• forming a first opening non-overlapping with the gate structure in the passivation layer;
• depositing a conductive layer in the first opening;
• forming a field plate on the passivation layer;
• and
• forming a second opening overlapping with the gate structure