Method for manufacturing low-temperature poly-silicon thin film transistor, low-temperature poly-silicon thin film transistor and display device
AssigneesBoe Technology Group Co., Ltd., Hefei Boe Optoelectronics Technology Co., Ltd.
InventorKui GONG
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Abstract
The present disclosure provides a method for manufacturing an LTPS TFT, including steps of: forming patterns of a p-Si layer and a protection layer on a base substrate, the protection layer covering the p-Si layer; performing a first ion injection operation so as to inject ions through the protection layer into the p-Si layer, thereby to form a heavily-drain-doped region; and performing an ashing operation and performing a second ion injection operation, to form a pattern of an LTPS active layer including a heavily-drain-doped region, a lightly-drain-doped region and an undoped region.
Claims20
A method for manufacturing a low-temperature poly-silicon (LTPS) thin film transistor (TFT), comprising steps of:
- forming patterns of a p-Si layer and a protection layer on a base substrate, the protection layer covering the p-Si layer;
- performing a first ion injection operation so as to inject ions through the protection layer into the p-Si layer, thereby to form a heavily-drain-doped region;
- and
- performing an ashing operation and performing a second ion injection operation, so as to form a pattern of an LTPS active layer including a heavily-drain-doped region, a lightly-drain-doped region and an undoped region.
Dependencies are inferred from the claim text.