Low resistance contact structures for trench structures
AssigneeInternational Business Machines Corporation
InventorsPraneet Adusumilli, Alexander Reznicek, Oscar van der Straten, Chih-Chao Yang
Life of this patent
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Abstract
An electrical device including at least one contact surface and an interlevel dielectric layer present atop the electrical device, wherein the interlevel dielectric layer includes at least one trench to the at least one contact surface of the electrical device. A conformal titanium liner is present on the sidewalls of the trench and is in direct contact with the at least one contact surface. The conformal titanium liner may be composed of 100 wt. % titanium, and may have a thickness ranging from 10 Å to 100 Å.
Claims20
A semiconductor device comprising:
- a channel region of the semiconductor device, wherein source and drain regions that are positioned on opposing sides of the channel region;
- a gate structure on the channel region of the semiconductor device;
- and
- a contact to at least one of the source and drain regions, the contact including a conformal titanium liner that is present on the sidewalls of a trench through an interlevel dielectric to the source and drain regions, and a metal fill comprising ruthenium (Ru), rhodium (Rh), iridium (Ir), osmium (Os), molybdenum (Mo), copper (Cu) or a combination thereof.
A semiconductor device comprising:
- a channel region of the semiconductor device, wherein source and drain regions that are positioned on opposing sides of the channel region;
- a metal semiconductor alloy region that is in direct contact with the at least one contact surface of the source and drain regions;
- a gate structure on the channel region of the semiconductor device;
- and
- a contact to at least one of the metal semiconductor alloy region of the source and drain regions, the contact including a conformal titanium liner that is present on the sidewalls of a trench through an interlevel dielectric to the source and drain regions, and a metal fill comprising ruthenium (Ru), rhodium (Rh), iridium (Ir), osmium (Os), molybdenum (Mo), copper (Cu) or a combination thereof.
A semiconductor device comprising:
- a channel region of the semiconductor device, wherein source and drain regions that are positioned on opposing sides of the channel region;
- a gate structure on the channel region of the semiconductor device;
- and
- a contact to at least one of the source and drain regions, the contact including a conformal titanium liner of substantially 100 wt. % titanium that is present on the sidewalls of a trench through an interlevel dielectric to the source and drain regions, and a metal fill comprising ruthenium (Ru), rhodium (Rh), iridium (Ir), osmium (Os), molybdenum (Mo), copper (Cu) or a combination thereof.
Dependencies are inferred from the claim text.