Semiconductor device and fabrication method thereof
AssigneesSemiconductor Manufacturing International (Shanghai) Corporation, Semiconductor Manufacturing International (Beijing) Corporation
InventorYong LI
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Abstract
Semiconductor device and fabrication method are provided. The method includes: providing a base substrate; forming gate structures on the base substrate; forming source/drain doped regions in the base substrate on sides of each gate structure, where the source/drain doped regions have recessed top surfaces and are doped with source/drain ions; and doping into the recessed top surfaces of the source/drain doped regions with contact ions to form contact doped regions in top portions of the source/drain doped regions, where the contact ions have a conductivity type same as the source/drain ions.
Claims20
A fabrication method of a semiconductor device, comprising:
- providing a base substrate;
- forming gate structures on the base substrate;
- forming source/drain doped regions in the base substrate on sides of each gate structure, wherein the source/drain doped regions have recessed top surfaces and are doped with source/drain ions;
- and
- doping into the recessed top surfaces of the source/drain doped regions with contact ions to form contact doped regions in top portions of the source/drain doped regions, wherein the contact ions have a conductivity type same as the source/drain ions.
A semiconductor device, comprising:
- a base substrate;
- a gate structure on the base substrate;
- source/drain doped regions in the base substrate on sides of the gate structure, wherein the source/drain doped regions have recessed top surfaces and are doped with source/drain ions;
- contact doped regions in the top portions of the source/drain doped region, with contact ions having a conductivity type same as the source/drain ions, wherein the recessed top surfaces of the source/drain doped regions are surfaces of the contact doped regions.
Dependencies are inferred from the claim text.