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US 2018/0294334 A1Published application
Self-forming spacers using oxidation
AssigneeInternational Business Machines Corporation
InventorsKevin K. Chan, Masaharu Kobayashi, Effendi Leobandung
Life of this patent
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Abstract
A method of forming a self-forming spacer using oxidation. The self-forming spacer may include forming a fin field effect transistor on a substrate, the fin field effect transistor includes a gate on a fin, the gate is perpendicular to the fin; forming a gate spacer on the gate and a fin spacer on the fin, the gate spacer and the fin spacer are formed in a single step by oxidizing an exposed surface of the gate and an exposed surface of the fin; and removing the fin spacer from the fin.
Claims17
A method comprising:
- forming a gate spacer on exposed surfaces of a gate and a fin spacer on exposed surfaces of a semiconductor fin, the gate spacer and the fin spacer are formed in a single step by oxidizing exposed surfaces of gate and the exposed surfaces of the semiconductor fin, wherein the exposed surfaces of the gate include at least an exposed vertical surface and the exposed surfaces of the semiconductor fin include at least an exposed horizontal surface and an exposed vertical surface;
- and
- removing the fin spacer from the exposed surfaces of the semiconductor fin using a water wet etch, wherein both the fin spacer and the gate spacer are exposed to the water wet etch, but only the fin spacer is removed and the gate spacer remains on the exposed surfaces of the gate.
A method comprising:
- patterning a dummy gate above and perpendicular to a semiconductor fin;
- oxidizing exposed surfaces of the dummy gate and exposed surfaces of the semiconductor fin to form silicon dioxide gate spacers on opposite vertical sidewalls of the dummy gate and a germanium oxide fin spacer on both a top surface and vertical sidewalls of the semiconductor fin;
- and
- removing, without a mask, the germanium oxide fin spacer to expose the top surface and vertical sidewalls of the semiconductor fin without removing the gate spacers.
1 more element
A method comprising:
- forming fins in a top layer of a semiconductor-on-insulator (SOI) substrate such that an underlying buried oxide layer is exposed between each fin;
- patterning a polysilicon dummy gate above and perpendicular to the fins;
- simultaneously forming silicon dioxide gate spacers and a germanium oxide fin spacer by oxidizing exposed surfaces of the polysilicon dummy gate and exposed surfaces of the fins, wherein the gate spacers are formed only along vertical sidewalls of the polysilicon dummy gate, and wherein the germanium oxide fin spacer is formed both on vertical sidewalls and a top surface of the fins;
- removing the germanium oxide fin spacer without removing the silicon dioxide gate spacers by exposing both the silicon dioxide gate spacers and the germanium oxide fin spacer to a wet water etch;
- and
- replacing the polysilicon dummy gate with a metal gate.
3 more elements
Dependencies are inferred from the claim text.