Electronic device including a termination structure

An electronic device including a termination structure, the termination structure comprising:

• a substrate including a semiconductor material of a first conductivity type;
• a first semiconductor layer of a second conductivity type opposite the first conductivity type, wherein the first semiconductor layer overlies the substrate and has a primary surface;
• a first trench extending through a majority of a thickness of the first semiconductor layer;
• a first doped region of the first conductivity type adjacent to the primary surface of the first semiconductor layer and abutting the first trench;
• and
• a body extension region of the second conductivity type adjacent to the primary surface of the first semiconductor layer, and the first doped region is disposed between body extension region and the first trench.

An electronic device including a termination structure, the termination structure comprising:

• a substrate including a semiconductor material of a first conductivity type;
• a first semiconductor layer of second conductivity type opposite the first conductivity type, wherein the first semiconductor layer overlies the substrate and has a primary surface;
• a first trench extending through a majority of a thickness of the first semiconductor layer;
• a first doped region underlying the first trench and extending to the substrate;
• a second trench extending through a majority of the thickness of the first semiconductor layer and spaced apart from the first trench;
• a second doped region underlying the second trench, extending to the substrate, and spaced apart from the first doped region;
• and
• a third doped region of the first conductivity type, wherein the third doped region is adjacent to the primary surface of the first semiconductor layer and spaced apart from the first and second trenches.