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US 2018/0294310 A1Published application
Image sensor and method of fabricating the same
AssigneeSK hynix Inc.
InventorByoung-Gyu KIM
Life of this patent
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Abstract
An image sensor may include: a trench formed in a substrate; an impurity region formed in the substrate to be in contact with the trench; and a re-crystallization layer formed in the substrate to be in contact with bottom and side surfaces of the trench and a surface of the substrate. The re-crystallization layer may contain one or more kinds of elements different from an element constituting the substrate.
Claims20
An image sensor comprising:
- a trench formed in a substrate;
- an impurity region formed in the substrate to be in contact with the trench;
- and
- a re-crystallization layer formed in the substrate to be in contact with bottom and side surfaces of the trench and a surface of the substrate,
- wherein the re-crystallization layer contains one or more kinds of elements different from an element constituting the substrate.
2 more elements
An image sensor comprising:
- a substrate having a first surface and a second surface facing the first surface;
- a trench formed at the first surface of the substrate;
- an impurity region formed in the substrate to be in contact with the trench;
- a first re-crystallization layer formed in the substrate to be in contact with bottom and side surfaces of the trench and the first surface of the substrate;
- and
- a second re-crystallization layer formed in the substrate to be in contact with the second surface of the substrate,
- wherein each of the first and second re-crystallization layers contains one or more kinds of elements different from an element constituting the substrate.
4 more elements
A method of fabricating an image sensor, comprising:
- forming a trench at a first surface of a substrate by etching the substrate having the first surface and a second surface facing the first surface;
- performing a primary ion-implantation process to form a first amorphous layer in the substrate such that the first amorphous layer is in contact with bottom and side surfaces of the trench and the first surface of the substrate;
- performing a primary anneal process to convert the first amorphous layer into a first re-crystallization layer;
- and
- forming an impurity region in the substrate such that the impurity region is in contact with the trench,
- wherein the primary ion-implantation process is performed using one or more kinds of elements different from an element constituting the substrate.
3 more elements
Dependencies are inferred from the claim text.