Solid-state imaging device, method for manufacturing solid-state imaging device, and electronic apparatus

A method for manufacturing a solid-state imaging device comprising

• a pixel part having a plurality of pixels performing photoelectric conversion arranged in a matrix,
• a reading part reading pixel signals from the pixel part to the column output direction,
• a first substrate, and
• a second substrate, wherein
• the reading part includes at least
• a row driver which drives the row designated in the pixel part so as to read out the pixel signals in the row to the column output direction and
• a column readout circuit applying predetermined signal processing with respect to the signals read out in response to driving of the row driver, and
• the first substrate and the second substrate have a multilayer structure in which they are connected through a column level connection part which is formed in at least one side portion of the column output direction of each substrate and through a row level connection part which is formed in at least one side portion of the direction perpendicular to the column output direction of each substrate,
• the method for manufacturing a solid-state imaging device comprising,
• on the first substrate,
• forming a pixel part with a side portion along the column level connection part of the column output direction having a first pitch and with a side portion along the row level connection part of the direction perpendicular to the column output direction having a second pitch,
• processing the second substrate to at least
• form along the column level connection part a column readout circuit with a side portion of the column output direction having a third pitch corresponding to the first pitch,
• forming along the row level connection part a row driver with a side portion of the direction perpendicular to the column output direction having a fourth pitch corresponding to the second pitch,
• forming a pitch conversion-use interconnect region including a slanted interconnect for pitch conversion between interconnects, and
• making at least one of the third pitch of the column readout circuit or the fourth pitch of the row driver on the second substrate shorter than the corresponding first pitch or second pitch of the pixel part on the first substrate, and
• forming the pitch conversion-use interconnect region at least between the end part of the column readout circuit having the third pitch shorter than the pixel part and the end part of the column level connection part, and/or between the end part of the row driver having the fourth pitch shorter than the pixel part and the end part of the row level connection part.

An electronic apparatus comprising

• a solid-state imaging device and
• an optical system forming a subject image in the solid-state imaging device, wherein
• the solid-state imaging device comprises
• a pixel part having a plurality of pixels performing photoelectric conversion arranged in a matrix,
• a reading part reading the pixel signals from the pixel part to the column output direction,
• a first substrate, and
• a second substrate,
• the reading part includes at least
• a row driver which drives the row designated in the pixel part so as to read out the pixel signals in the row to the column output direction and
• a column readout circuit applying predetermined signal processing with respect to the signals read out in response to driving of the row driver,
• the first substrate and the second substrate have a multilayer structure in which they are connected through a column level connection part which is formed in at least one side portion of the column output direction of each substrate and through a row level connection part which is formed in at least one side portion of the direction perpendicular to the column output direction of each substrate,
• on the first substrate,
• a pixel part is formed, in which pixel part, the side portion along the column level connection part of the column output direction has a first pitch, and the side portion along the row level connection part of the direction perpendicular to the column output direction has a second pitch,
• on the second substrate, at least,
• a column readout circuit with a side portion of the column output direction having a third pitch corresponding to the first pitch is formed along the column level connection part,
• a row driver with a side portion of a direction perpendicular to the column output direction having a fourth pitch corresponding to the second pitch is formed along the row level connection part,
• a pitch conversion-use interconnect region including a slanted interconnect for pitch conversion between interconnects is formed,
• at least one of the third pitch of the column readout circuit or the fourth pitch of the row driver on the second substrate is shorter than the corresponding first pitch or second pitch of the pixel part on the first substrate, and
• the pitch conversion-use interconnect region is formed at least between the end part of the column readout circuit having the third pitch shorter than the pixel part and the end part of the column level connection part and/or between the end part of the row driver having the fourth pitch shorter than the pixel part and the end part of the row level connection part.