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US 2018/0294296 A1Published application
Solid-state imaging device, manufacturing method thereof, and electronic apparatus
AssigneeSony Corporation
InventorTakekazu Shinohara
Life of this patent
Estimating the term…
Abstract
A solid-state imaging device having a backside illuminated structure, includes: a pixel region in which pixels each having a photoelectric conversion portion and a plurality of pixel transistors are arranged in a two-dimensional matrix; an element isolation region isolating the pixels which is provided in the pixel region and which includes a semiconductor layer provided in a trench by an epitaxial growth; and a light receiving surface at a rear surface side of a semiconductor substrate which is opposite to a multilayer wiring layer.
Claims27
1-18. (canceled)
An imaging device, comprising:
- a semiconductor substrate including a first side as a light-receiving side, and a second side opposite to the first side;
- a plurality of photoelectric conversion regions in the semiconductor substrate, the plurality of the photoelectric conversion regions comprising;
- a first photoelectric conversion region,
- a second photoelectric conversion region,
- a third photoelectric conversion region, and
- a fourth photoelectric conversion region;
- wherein
- the first photoelectric conversion region is adjacent to the second photoelectric conversion region in a first direction in a plan view, and the first photoelectric conversion region is adjacent to the third photo electric conversion region in a second direction in the plan view;
- a floating diffusion region shared by the first, the second, the third and the fourth photoelectric conversion regions;
- a first element isolation region disposed between the first photoelectric conversion region and the second photoelectric conversion region;
- a second element isolation region disposed between the first photoelectric conversion region and the third photoelectric conversion region;
- a first light-shielding film disposed over the first element isolation region;
- a second light-shielding film disposed over the second element isolation region;
- and
- a multilayer wiring layer disposed at the second side of the semiconductor substrate, wherein
- the first element isolation region comprises a first void region, and
- the second element isolation region comprises a second void region.
14 more elements
An imaging device, comprising:
- a semiconductor substrate including a first side as a light-receiving side, and a second side opposite to the first side;
- a plurality of photoelectric conversion regions in the semiconductor substrate, the plurality of the photoelectric conversion regions comprising;
- a first photoelectric conversion region,
- a second photoelectric conversion region,
- a third photoelectric conversion region, and
- a fourth photoelectric conversion region;
- wherein
- the first photoelectric conversion region is adjacent to the second photoelectric conversion region in a first direction in a plan view, and the first photoelectric conversion region is adjacent to the third photo electric conversion region in a second direction in a plan view;
- a floating diffusion region shared by the first, the second, the third and the fourth photoelectric conversion regions;
- a first element isolation region disposed between the first photoelectric conversion region and the second photoelectric conversion region;
- a second element isolation region disposed between the first photoelectric conversion region and the third photoelectric conversion region;
- and
- a multilayer wiring layer disposed at the second side of the semiconductor substrate, wherein
- the first element isolation region comprises a first void region, and
- the second element isolation region comprises a second void region.
12 more elements
Dependencies are inferred from the claim text.