Semiconductor structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsCHIA-YU WEI, CHIN-HSUN HSIAO, YI-HSING CHU, YEN-LIANG LIN, YUNG-LUNG HSU, HSIN-CHI CHEN
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Abstract
A semiconductor structure includes a semiconductive substrate includes a first side and a second side opposite to the first side, a radiation sensing device disposed in the semiconductive substrate, an interlayer dielectric (ILD) disposed over the first side of the semiconductive substrate, and a conductive pad disposed in the semiconductive substrate and the ILD, wherein a thickness of the conductive pad is less than a sum of a thickness of the semiconductive substrate and a thickness of the ILD.
Claims20
A semiconductor structure, comprising:
- a semiconductive substrate including a first side and a second side opposite to the first surface;
- a radiation sensing device disposed in the semiconductive substrate;
- an interlayer dielectric (ILD) disposed over the first side of the semiconductive substrate;
- and
- a conductive pad disposed in the semiconductive substrate and the ILD,
- wherein a thickness of the conductive pad is less than a sum of a thickness of the semiconductive substrate and a thickness of the ILD.
A semiconductor structure, comprising:
- a semiconductive substrate including a first surface and a second surface opposite to the first surface;
- a radiation sensing device disposed in the semiconductive substrate;
- an interlayer dielectric (ILD) disposed over the first surface of the semiconductive substrate;
- and
- a conductive pad disposed in the semiconductive substrate and the ILD,
- wherein the conductive pad includes a first portion surrounded by the semiconductive substrate and a second portion surrounded by the ILD, and a width of the first portion is greater than a width of the second portion.
A semiconductor image structure, comprising:
- a semiconductive layer including a first surface and a second surface opposite to the first surface;
- a radiation sensing device disposed in the semiconductive layer;
- an interlayer dielectric (ILD) disposed over the first surface of the semiconductive layer;
- a color filter disposed over the second surface of the semiconductive layer;
- and
- a conductive pad disposed within the semiconductor layer and the ILD, and electrically connected to an interconnect structure,
- wherein a top surface of the conductive pad is between the first surface of the semiconductive layer and the second surface of the semiconductive layer.
Dependencies are inferred from the claim text.