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US 2018/0294276 A1Published application
Semiconductor device and critical dimension defining method thereof
AssigneeMacronix International Co., Ltd.
InventorsKuan-Cheng Liu, Yu-Lin Liu, Cheng-Wei Lin, Chin-Cheng Yang, Shou-Wei Huang
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Abstract
A semiconductor device includes a semiconductor substrate, a circuit unit and an align mark. The circuit unit is disposed on the semiconductor substrate. The align mark includes a first part and a second part respectively formed in the semiconductor substrate and adjacent to two opposite sides of the circuit unit, wherein the first part and the second part depart from each other for a predetermined distance along with a first direction.
Claims18
A semiconductor device, comprising:
- a semiconductor substrate;
- a circuit unit, comprising a memory array, a first conductive layer, and at least one second conductive layer disposed on a predetermined region of the semiconductor substrate, the first conductive layer is under the at least one second conductive layer;
- and
- an align opening formed in the first conductive layer and only at a distance from a least one outer edge of the memory array in the predetermined region, wherein there is no landing contact formed directly on the align opening.
1 more element
A critical dimension (CD) defining method of a semiconductor device, comprising:
- providing a semiconductor substrate having a predetermined region;
- forming an align opening comprising a first part and a second part extending in to the semiconductor substrate and adjacent to two opposite sides of the predetermined region respectively, wherein the first part and the second part depart from each other for a first predetermined distance along with a first direction;
- and
- forming a circuit unit comprising a memory array on the predetermined region simultaneous to the forming of the align opening.
1 more element
Dependencies are inferred from the claim text.