Methods Of Forming An Array Of Elevationally-Extending Strings Of Memory Cells, Methods Of Forming Polysilicon, Elevationally-Extending Strings Of Memory Cells Individually Comprising A Programmable Charge Storage Transistor, And Electronic Components Comprising Polysilicon

A method of forming polysilicon, comprising:

• forming a first polysilicon-comprising material over a substrate, the first polysilicon-comprising material comprising at least one of elemental carbon and elemental nitrogen at a total of 0.1 to 20 atomic percent;
• and
• forming a second polysilicon-comprising material over the first polysilicon-comprising material, the second polysilicon-comprising material comprising less, if any, total elemental carbon and elemental nitrogen than the first polysilicon-comprising material.

An electronic component comprising polysilicon, the polysilicon comprising:

• a first polysilicon-comprising material proximate a second polysilicon-comprising material, the first polysilicon-comprising material comprising at least one of elemental carbon and elemental nitrogen at a total of 0.1 to 20 atomic percent, the second polysilicon-comprising material comprising less, if any, total elemental carbon and elemental nitrogen than the first polysilicon-comprising material.