Semiconductor structure with contact plug and method of fabricating the same

A fabricating method of a semiconductor structure with a contact plug, comprising:

• providing a substrate, the substrate comprising a memory cell region and a peripheral circuit region, wherein a memory cell is disposed within the memory cell region and the memory cell comprises a transistor and a capacitor structure;
• forming a first stacked dielectric layer covering the memory cell region and the peripheral circuit region, wherein the first stacked dielectric layer comprises two first dielectric layers and a second dielectric layer which are arranged in a sequence of the first dielectric layer, the second dielectric layer and the first dielectric layer stacked from bottom to top of the first stacked dielectric layer;
• performing a planarization process to remove the first dielectric layer on the top of the second dielectric layer and expose the second dielectric layer to form a first planar stacked dielectric layer;
• and
• after the planarization process, forming a contact plug within the peripheral circuit region and penetrating the first planar stacked dielectric layer.