US 2018/0294264 A1Published application

Semiconductor Device

AssigneeSamsung Electronics Co., Ltd.

InventorsSeung Uk Han, Taek Yong Kim, Satoru Yamada, Jun Hee Lim, Ki Jae Hur

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Abstract

A semiconductor device includes first and second active regions extending in a first direction on a substrate and spaced apart from each other in a second direction intersecting the first direction, wherein the first and second active regions overlaps with each other in the second direction, a third active region extending in the first direction on the substrate and spaced apart from the first active region in the second direction. The first active region is positioned between the second and third active regions in the second direction. The first and third active regions partially overlap in the second direction, and a device isolation film is configured to define the first to third active regions.

Claims21

Dependent claims

A semiconductor device, comprising:

first and second active regions extending in a first direction on a substrate and spaced apart from each other in a second direction intersecting the first direction, wherein the first and second active regions overlaps entirely with each other in the second direction;
a third active region extending in the first direction on the substrate and spaced apart from the first active region in the second direction, wherein the first active region is positioned between the second and third active regions in the second direction, and the first and third active regions partially overlaps in the second direction;
a device isolation film configured to define the first to third active regions, wherein the device isolation film comprises a first device isolation film positioned between the first and second active regions and a second device isolation film positioned between the first and third active regions, and a width of the first device isolation film in the second direction is lesser than a width of the second device isolation film in the second direction;
and
a gate structure formed on the first to third active regions and extending in the second direction.

2 more elements

A semiconductor device, comprising:

first and second active regions extending in a first direction on a substrate and spaced apart from each other in a second direction intersecting the first direction, wherein the first and second active regions are arranged so as to be overlapped entirely with each other in the second direction;
a third active region extending in the first direction on the substrate and spaced apart from the first active region in the second direction, wherein the first active region is positioned between the second and third active regions in the second direction, and the first and third active regions are arranged so as to be only partially overlapped in the second direction;
a device isolation film configured to define the first to third active regions, wherein the device isolation film comprises a first device isolation film positioned between the first and second active regions and a second device isolation film positioned between the first and third active regions,
the first device isolation film comprises a first liner and a first insulating film formed on the first liner, and
the second device isolation film comprises a second liner, a third liner formed on the second liner, and a second insulating film formed on the second liner.

2 more elements

A semiconductor device, comprising:

first and second active regions extending in a first direction on a substrate and spaced apart from each other in a second direction intersecting the first direction, wherein the first and second active regions are arranged so as to be overlapped entirely with each other in the second direction;
a third active region extending in the first direction on the substrate and spaced apart from the first active region in the second direction, wherein the first active region is positioned between the second and third active regions in the second direction, and the first and third active regions are arranged so as to be only partially overlapped in the second direction;
a device isolation film configured to define the first to third active regions;
and
a gate structure formed on the first to third active regions and extending in the second direction, wherein the gate structure comprises a first portion extending on the first and second active regions in the second direction, a second portion extending on the third active region in the second direction, and a third portion connecting the first and second portions and being formed in the second and third active regions, and a width of the third portion in the first direction is greater than widths of the first and second portions in the first direction.

2 more elements

Dependencies are inferred from the claim text.

Facts

Application: 15/827,231Filed 30 Nov 2017
Priority: KR 10-2017-00451507 Apr 2017
Published: 11 Oct 2018
Term ends: Not estimatedThe source records don’t support an estimate.

Classification15 codes

H10D 84/85
Of only insulated-gate FETs [IGFET]: complementary IGFETs, e.g. CMOS
G11C 11/4085
Address circuits: word line control circuits, e.g. word line drivers, - boosters, - pull-up, - pull-down, - precharge
H10D 84/0188
The components including complementary IGFETs, e.g. CMOS devices: manufacturing their isolation regions
H10D 84/038
Using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology: using silicon technology, e.g. SiGe