Semiconductor device and manufacturing method thereof

A semiconductor device, comprising:

• a substrate comprising a first region, a second region, and a third region;
• a first gate stack comprising a first gate dielectric layer on the substrate in the first region;
• a second gate stack comprising a second gate dielectric layer on the substrate in the second region;
• and
• a third gate stack comprising a third gate dielectric layer on the substrate in the third region,
• wherein the substrate in the first region, the second region and the third region comprise an implantation species, and the implantation species comprises fluorine,
• wherein the first gate dielectric layer, the second gate dielectric layer and the third gate dielectric layer have different thicknesses,
• wherein the first gate dielectric layer, the second gate dielectric layer, and the third gate dielectric layer are located on a doped region in the substrate, and the implantation species is comprised in the doped region, the doped region comprises a dopant different from the implantation species,
• wherein the implantation species is further comprised in a junction interface between the doped region and the substrate in the first region, the second region and the third region, and the junction interface is below an isolation structure in the substrate.

A semiconductor device, comprising:

• a substrate comprising a first region, a second region, and a third region;
• a growth promoting region comprising an implantation species in a surface of the substrate in the first region, wherein the implantation species is not comprised in the second region and the third region;
• a first dielectric layer on the growth promoting region of the substrate in the first region;
• a second dielectric layer on the substrate in the second region;
• and
• a third dielectric layer on the substrate in the third region;
• wherein the first dielectric layer, the second dielectric layer and the third dielectric layer have different thicknesses.