Semiconductor device, semiconductor device manufacturing method, and power conversion apparatus

A semiconductor device manufacturing method, comprising the steps of:

• (a) forming a MOS gate structure and a diode structure on a first main surface side of a semiconductor substrate;
• (b) forming an interlayer dielectric on said MOS gate structure and said diode structure;
• (c) opening a contact hole in said interlayer dielectric on said MOS gate structure, said contact hole exposing a semiconductor layer of said MOS gate structure;
• (d) forming a barrier metal on said semiconductor layer in said contact hole and on said interlayer dielectric;
• (e) removing said interlayer dielectric and said barrier metal on said diode structure;
• and
• (f) forming a first electrode in said contact hole and on said diode structure.

A power conversion apparatus comprising:

• a main conversion circuit to convert input power for output, said main conversion circuit including a semiconductor device;
• a drive circuit to output a drive signal for driving said semiconductor device to said semiconductor device;
• and
• a control circuit to output a control signal for controlling said drive circuit to said drive circuit, wherein
• said semiconductor device includes:
• a semiconductor substrate having a first main surface and a second main surface, and including a transistor region forming a transistor extending from said first main surface to said second main surface and a diode region forming a diode extending from said first main surface to said second main surface;
• and
• a first electrode disposed on said first main surface of said semiconductor substrate over said transistor region and said diode region,
• said semiconductor substrate includes a MOS gate structure on a first main surface side in said transistor region,
• said semiconductor device includes:
• an interlayer dielectric covering a gate electrode of said MOS gate structure, and having a contact hole exposing a semiconductor layer of said MOS gate structure;
• and
• a barrier metal disposed in said contact hole, and
• said first electrode enters said contact hole, is in contact with the semiconductor layer of said MOS gate structure through said barrier metal in said contact hole, and is in direct contact with a semiconductor layer in said diode region of said semiconductor substrate.