Packages with Si-substrate-free Interposer and Method Forming Same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMing-Fa Chen, Chen-Hua Yu
Life of this patent
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Abstract
A method includes forming a plurality of dielectric layers, forming a plurality of redistribution lines in the plurality of dielectric layers, etching the plurality of dielectric layers to form an opening, filling the opening to form a through-dielectric via penetrating through the plurality of dielectric layers, forming an insulation layer over the through-dielectric via and the plurality of dielectric layers, forming a plurality of bond pads in the dielectric layer, and bonding a device to the insulation layer and a portion of the plurality of bond pads through hybrid bonding.
Claims20
A method comprising:
- forming a plurality of dielectric layers;
- forming a plurality of redistribution lines in the plurality of dielectric layers;
- etching the plurality of dielectric layers to form an opening;
- filling the opening to form a through-dielectric via penetrating through a portion of the plurality of dielectric layers;
- forming an insulation layer over the through-dielectric via and the plurality of dielectric layers;
- forming a plurality of bond pads in the insulation layer;
- and
- bonding a first device to the insulation layer and a first portion of the plurality of bond pads through hybrid bonding.
A method comprising:
- forming a plurality of dielectric layers;
- forming a plurality of redistribution lines in the plurality of dielectric layers;
- forming a first through-dielectric via and a second through-dielectric via penetrating through a portion of the plurality of dielectric layers;
- forming an insulation layer over the plurality of dielectric layers;
- forming a plurality of bond pads in the insulation layer and electrically coupling to the first and the second through-dielectric vias and the plurality of redistribution lines;
- and
- bonding a first device and a second device to the dielectric layer and portions of the plurality of bond pads through hybrid bonding, wherein the first device and the second device are electrically interconnected through at least one of the plurality of redistribution lines.
A package comprising:
- a plurality of dielectric layers;
- a plurality of redistribution lines in the plurality of dielectric layers;
- a through-dielectric via penetrating through a portion of the plurality of dielectric layers;
- a plurality of bond pads over and connected to the through-dielectric via and the plurality of redistribution lines;
- a first insulation layer, with the plurality of bond pads located in the first insulation layer;
- and
- a first device bonded to the first insulation layer and a first portion of the plurality of bond pads, wherein the first device comprises:
- surface metal features bonded to the plurality of bond pads;
- and
- a surface dielectric layer bonded to the first insulation layer.
Dependencies are inferred from the claim text.