Terahertz detector comprised of p-n junction diode

A method of forming a semiconductor detector structure, the method comprising:

• forming a p-n junction diode in an active device layer of a silicon-on-insulator (SOI) substrate, the active device layer being formed on an upper surface of an insulator layer of the SOI substrate, the insulator layer being formed on an upper surface of a carrier substrate of the SOI substrate;
• removing the carrier substrate to thereby expose the insulator layer;
• forming a first opening through the insulator layer to access a backside of a first doped region of the p-n junction diode, the first doped region underlying a second doped region of the p-n junction diode, the first doped region having a first conductivity type associated therewith and the second doped region having a second conductivity type associated therewith which is opposite in polarity to the first conductivity type;
• forming a back contact on a back surface of the first doped region and electrically connecting with the first doped region;
• forming a conductive interconnect layer on an upper surface of the SOI substrate, the interconnect layer comprising a first top contact providing electrical connection with the second doped region;
• and
• forming an electrode of the p-n junction diode in the first opening on the backside of the detector structure, the electrode providing electrical connection with the back contact of the p-n junction diode.