Dummy Features in Redistribution Layers (RDLS) and Methods of Forming Same

A package comprising:

• an integrated circuit die encapsulated in an encapsulant;
• a first metallization pattern over the integrated circuit die, wherein the first metallization pattern comprises:
• a first dummy conductive pattern encircling a first plurality of physically separated dielectric regions;
• and
• a first signal line electrically connected to the integrated circuit die;
• and
• a second metallization pattern over the first metallization pattern, wherein the second metallization pattern comprises a second dummy conductive pattern encircling a second plurality of physically separated dielectric regions, wherein a first line perpendicular to a major surface of the integrated circuit die extends through a first one of the second plurality of physically separated dielectric regions and the first dummy conductive pattern.

A method comprising:

• encapsulating an integrated circuit die in a molding compound;
• forming a first dummy pattern over the integrated circuit die, wherein the first dummy pattern comprises:
• a first conductive material;
• and
• a first plurality of holes extending through the first conductive material and arranged in a first grid of first rows and first columns;
• depositing a first dielectric layer in the first plurality of holes;
• forming a second dummy pattern over the first dielectric layer, wherein the second dummy pattern comprises:
• a second conductive material;
• and
• a plurality of second holes extending through the second conductive material and disposed in a second grid of second rows and second columns, wherein the second grid is offset from the first grid;
• and
• depositing a second dielectric layer in the second plurality of holes.