Semiconductor device, electronic circuit having the same, and semiconductor device forming method

A semiconductor device comprising:

• a plurality of first wires formed in a first layer;
• a plurality of second wires formed to intersect the plurality of first wires in a second layer stacked on the first layer;
• a plurality of first vias formed at intersections of the plurality of first wires and the plurality of second wires;
• and
• an inductor formed in a third layer stacked on the first layer and the second layer,
• wherein the plurality of first vias are disposed such that a length of a loop having a minimum length among a plurality of current path loops formed by the plurality of first wires, the plurality of second wires and the plurality of first vias in a plan view is longer than a predetermined length.

A method for forming a semiconductor device comprising:

• forming in a first layer a plurality of first wires configured to indicate a fixed potential;
• and
• forming an inductor in a second layer stacked on the first layer,
• wherein, in the forming the plurality of first wires, a wiring width of the first wire located within a range of a formation region of the inductor in a plan view among the plurality of first wires is narrowed compared to a wiring width of the first wire located outside the range of the formation region of the inductor.