Semiconductor device

A semiconductor device comprising:

• a power MISFET which drives a load;
• a driver transistor which outputs a signal to drive a gate of the power MISFET;
• a signal line which electrically connects an output of the driver transistor to the gate of the power MISFET;
• at least one source wiring, each source wiring being connected to a respective source region of the power MISFET and being formed in a first wiring layer;
• and
• at least one drain wiring, each drain wiring being connected to a respective drain region of the power MISFET and being formed in the first wiring layer,
• wherein the gate is formed of at least one gate electrode, each gate electrode extending in a first direction and being formed between a corresponding source region and a corresponding drain region of the power MISFET,
• the corresponding source region and the corresponding drain region are adjacent to each other in a second direction perpendicular to the first direction,
• the first direction is a gate width direction of the at least one gate electrode,
• both ends of each gate electrode in the first direction, formed between the corresponding source region and the corresponding drain region, are electrically connected to each other by a respective first metal wiring formed in the first wiring layer, which is different from a wiring layer in which the gate electrode is formed,
• the signal line includes each first metal wiring,
• each first metal wiring is formed between an adjacent pair of the source wiring and the drain wiring, and
• each first metal wiring, each source wiring and each drain wiring are formed in the first wiring layer.