US 2018/0294219 A1 · INTEGRATED CIRCUIT HAVING HETEROGENEOUS CONTACTS AND SEMICONDUCTOR DEVICE INCLUDING THE INTEGRATED CIRCUIT

Abstract

Provided is an integrated circuit which includes: a plurality of conductive lines extending in a first horizontal direction on a plane separate from a gate line, and including first and second conductive lines; a source/drain contact having a bottom surface connected to a source/drain region, and including a lower source/drain contact and an upper source/drain contact which are connected to each other in a vertical direction; and a gate contact having a bottom surface connected to the gate line, and extending in the vertical direction, in which the upper source/drain contact is placed below the first conductive line, and the gate contact is placed below the second conductive line. A top surface of the lower source/drain contact may be larger than a bottom surface of the upper source/drain contact.

Claims20

Dependent claims

An integrated circuit comprising:

a first active region extending in a first horizontal direction on a substrate;
a gate line extending in a second horizontal direction on the first active region, the second horizontal direction crossing the first horizontal direction;
a source/drain region formed at one side of the gate line on the first active region;
a plurality of conductive lines extending in the first horizontal direction on a plane separate from the gate line, and comprising first and second conductive lines;
a source/drain contact having a bottom surface connected to the source/drain region, and comprising a lower source/drain contact and an upper source/drain contact which are connected to each other in a vertical direction;
and
a gate contact having a bottom surface connected to the gate line, and extending in the vertical direction,
wherein the upper source/drain contact it placed below the first conductive line, and
the gate contact is placed below the second conductive line.

6 more elements

An integrated circuit comprising:

a first active region and a second active region which extend parallel with each other in a first horizontal direction on a substrate;
a plurality of gate lines extending in a second horizontal direction on the first and second active regions, the second horizontal direction crossing the first horizontal direction;
a plurality of source/drain regions formed at respective sides of the plurality of gate lines on the first and second active regions;
a plurality of conductive lines extending parallel with each other in the first horizontal direction on a plane separate from the plurality of gate lines;
a plurality of source/drain contacts each having a bottom surface connected to one of the plurality of source/drain regions and each extending in a vertical direction;
and
a plurality of gate contacts each having a bottom surface connected to one of the plurality of gate lines, and each comprising a lower gate contact and an upper gate contact which are connected to each other in the vertical direction,
wherein the plurality of source/drain contacts and upper gate contacts of the plurality of gate contacts are placed below the plurality of conductive lines respectively.

5 more elements

Dependencies are inferred from the claim text.

Integrated circuit having heterogeneous contacts and semiconductor device including the integrated circuit

Life of this patent

Integrated circuit having heterogeneous contacts and semiconductor device including the integrated circuit

Life of this patent

Abstract

Claims20