Packages with Si-substrate-free Interposer and Method Forming Same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMing-Fa Chen, Chen-Hua Yu
Life of this patent
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Abstract
A method includes forming a plurality of dielectric layers, forming a plurality of redistribution lines in the plurality of dielectric layers, etching the plurality of dielectric layers to form an opening, filling the opening to form a through-dielectric via penetrating through the plurality of dielectric layers, forming a dielectric layer over the through-dielectric via and the plurality of dielectric layers, forming a plurality of bond pads in the dielectric layer, bonding a device die to the dielectric layer and a first portion of the plurality of bond pads through hybrid bonding, and bonding a die stack to through-silicon vias in the device die.
Claims21
A method comprising:
- forming a plurality of dielectric layers;
- forming a plurality of redistribution lines in the plurality of dielectric layers;
- etching the plurality of dielectric layers to form an opening;
- filling the opening to form a through-dielectric via penetrating through the plurality of dielectric layers;
- forming a dielectric layer over the through-dielectric via and the plurality of dielectric layers;
- forming a plurality of bond pads in the dielectric layer;
- bonding a first device die to the dielectric layer and a first portion of the plurality of bond pads through hybrid bonding;
- bonding a die stack to through-silicon vias in the first device die;
- bonding an additional device die to the first device die, wherein the additional device die is bonded directly to the through-silicon vias in the first device die;
- forming an oxide layer over and contacting a semiconductor substrate of the additional device die;
- and
- forming a bond pad extending into the oxide layer.
A method comprising:
- forming a plurality of dielectric layers;
- forming a plurality of redistribution lines in each of the plurality of dielectric layers;
- forming a first through-dielectric via and a second through-dielectric via penetrating through the plurality of dielectric layers;
- forming a dielectric layer over the plurality of dielectric layers;
- forming a plurality of bond pads in the dielectric layer and electrically coupling to the first through-dielectric via, the second through-dielectric via, and the plurality of redistribution lines;
- bonding a first device die and a second device die to the dielectric layer and the plurality of bond pads through hybrid bonding, wherein the first device die and the second device die are electrically interconnected through the plurality of redistribution lines;
- filling a gap-filling material on opposite sides the first device die and the second device die;
- forming a third through-dielectric via penetrating through the gap-filling material;
- and
- bonding a third device die directly to, and in physical contact with, the third through-dielectric via;
- and
- bonding a die stack to the second device die.
(canceled)
A package comprising:
- a plurality of dielectric layers;
- a plurality of redistribution lines in each of the plurality of dielectric layers;
- a first through-dielectric via penetrating through the plurality of dielectric layers;
- a plurality of bond pads over and connected to the first through-dielectric via and the plurality of redistribution lines;
- a first dielectric layer, with the plurality of bond pads located in the first dielectric layer;
- a first device die bonded to the first dielectric layer and a first portion of the plurality of bond pads through hybrid bonding;
- a gap-filling material on opposite sides of the first device die;
- a second through-dielectric via penetrating through the gap-filling material;
- and
- a die stack bonded to the second through-dielectric via.
Dependencies are inferred from the claim text.