Wafer level integration for embedded cooling

Abstract

Techniques for wafer level integration of embedded cooling structures for integrated circuit devices are provided. In one embodiment, a method includes forming channel structures on a first surface of a silicon first wafer, wherein the channel structures respectively comprise radial channels that extend from central fluid distribution areas, and wherein integrated circuits are formed on a second surface of the silicon first wafer that opposes the first surface. The method can further include bonding a manifold wafer to the first surface of the silicon wafer such that inlet openings formed through the manifold wafer respectively connect to the central fluid distribution areas, thereby enclosing the radial channels and forming a bonded structure.

Dependencies are inferred from the claim text.