Power semiconductor device and method of manufacturing the same, and power conversion device

A power semiconductor device comprising:

• a casing;
• a first insulating circuit board disposed so as to be surrounded by the casing;
• a second insulating circuit board surrounded by the casing and spaced from the first insulating circuit board so as to sandwich a semiconductor element between the first insulating circuit board and the second insulating circuit board;
• and
• a sealing material which fills a region surrounded by the casing,
• the casing having at least a portion with a hole extending from an outermost surface of the casing to reach an inner wall surface opposite to the outermost surface,
• from at least a portion of the inner wall surface of the casing a protrusion, which extends to a region overlapping the first or second insulating circuit board in a plan view, extending toward the region surrounded by the casing.

A method of manufacturing a power semiconductor device, comprising:

• joining a second insulating circuit board over one main surface of a first insulating circuit board so as to sandwich a semiconductor element between the first insulating circuit board and the second insulating circuit board;
• disposing the first insulating circuit board, the semiconductor element and the second insulating circuit board so as to be surrounded by a casing;
• and
• sealing the semiconductor element by supplying a sealing material to a region surrounded by the casing,
• forming a hole through the first or second insulating circuit board to extend from one main surface to the other main surface opposite to the one main surface,
• forming from at least a portion of an inner wall surface of the casing a protrusion, which extends to a region overlapping the first or second insulating circuit board in a plan view, to extend toward the region surrounded by the casing.