System and method for performing a wet etching process

A method for wet etching a wafer using a single wafer wet etching processing system that includes a plurality of stations to produce a wafer having a target final wafer thickness profile, comprising the steps of:

• providing, at a process controller including a memory and a processor configured by executing instructions in the form of code therein, wafer profile data including a prescribed etch offset and a target final wafer thickness profile that defines a target final thickness parameter for each of a plurality of radial locations on a surface of the wafer after the second etch step;
• measuring, at a measurement station, an initial thickness of the wafer at a plurality of points across the surface of the wafer;
• calculating, using the configured processor, a first etch profile according to the etch offset, the target final wafer thickness parameter of each radial location and the measured initial thickness of each radial location;
• generating, using the configured processor, an etch recipe for the first etch step according to the first etch profile;
• etching the wafer using a first etchant that has a first etch rate, wherein the wafer is etched according to the first etch recipe;
• measuring, at the measurement station, a post-etch thickness of the wafer at a plurality of points across the wafer;
• determining, using the configured processor, that the post-etch thickness of the wafer matches the final wafer thickness profile;
• etching the wafer using a second etchant that has a second etch rate, wherein the wafer is etched according to a second etch recipe;
• wherein the first and second etchants comprise different chemical compositions.