Semiconductor structure and fabrication method thereof

Abstract

Semiconductor structures and fabrication methods are provided. An exemplary fabrication method includes providing a base substrate; forming a dielectric layer having an opening on the base substrate; forming a Ruthenium (Ru)-containing layer on side surfaces and a bottom of the opening and on a top surface of the dielectric layer; forming a Copper (Cu) containing layer to fill the opening and cover the Ruthenium (Ru)-containing layer; performing a first chemical mechanical polishing (CMP) step to remove a first partial thickness of the Copper (Cu)-containing layer; performing a second CMP step using a polishing slurry containing a Cu-corrosion-inhibitor to remove a second partial thickness of the Copper (Cu)-containing layer above the Ruthenium (Ru)-containing layer; and performing a third CMP step using a polishing slurry containing a Cu-corrosion-inhibitor to remove a third partial thickness of the Copper (Cu)-containing layer above the dielectric layer.

Dependencies are inferred from the claim text.