Method for anisotropic dry etching of titanium-containing films
AssigneeTokyo Electron Limited
InventorsKandabara N. Tapily, Vinayak Rastogi, Alok Ranjan
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Abstract
Methods for anisotropic dry etching of titanium-containing films used in semiconductor manufacturing have been disclosed in various embodiments. According to one embodiment, the method includes providing a substrate having a titanium-containing film thereon, and etching the titanium-containing film by a) exposing the substrate to a chlorine-containing gas to form a chlorinated layer on the substrate, b) exposing the substrate to a plasma-excited inert gas to remove the chlorinated layer, and c) repeating the exposing steps at least once.
Claims20
A substrate processing method, comprising:
- providing a substrate having a titanium-containing film thereon;
- and
- etching the titanium-containing film in a dry etching process by:
- a) exposing the substrate to a chlorine-containing gas to form a chlorinated layer on the substrate;
- b) exposing the substrate to a plasma-excited inert gas to remove the chlorinated layer from the substrate;
- and
- c) repeating the exposing steps at least once.
A substrate processing method, comprising:
- providing a substrate having a titanium-containing film thereon, wherein the titanium-containing film contains Ti metal, TiN, TiC, TiCN, or combinations thereof and
- etching the titanium-containing film in a dry etching process by:
- a) exposing the substrate to a chlorine-containing gas to form a chlorinated layer on the substrate, wherein the chlorine-containing gas contains Cl2, BCl3, or chlorine radicals;
- b) exposing the substrate to a plasma-excited inert gas to remove the chlorinated layer from the substrate;
- and
- c) repeating the exposing steps at least once.
A substrate processing method, comprising:
- providing a substrate containing a recessed feature with a sidewall and a bottom portion, the recessed feature containing a titanium-containing film on the sidewall and on the bottom portion;
- and
- removing the titanium-containing film in a dry etching process from the bottom portion, but not from the sidewall, by:
- a) exposing the substrate to a chlorine-containing gas to form a chlorinated layer on the bottom portion;
- b) exposing the substrate to a plasma-excited inert gas to remove the chlorinated layer from the bottom portion;
- and
- c) repeating the exposing steps at least once.
Dependencies are inferred from the claim text.