Structures and methods for improved lithographic processing

A method for forming interconnects, the method comprising:

• providing a non-lithosensitive structure over a dielectric layer, the structure comprising a top surface and a bottom surface, the bottom surface being closest to the dielectric layer, and further comprising a plurality of openings extending from the top surface to the bottom surface;
• providing a layer of a first material at least on side walls of the plurality of openings;
• filling the plurality of openings layered with the first material with a second material, wherein:
• the first material is not lithosensitive while the second material is lithosensitive, or
• the first material comprises a first lithosensitive material, the second material comprises a second lithosensitive material, and the second lithosensitive material is more lithosensitive than the first lithosensitive material;
• selectively exposing the non-lithosensitive structure with the plurality of openings filled with the second material to extreme ultra-violet irradiation or a charged-particle beam;
• developing the exposed non-lithosensitive structure;
• removing at least the second material in one or more of the plurality of openings of the developed non-lithosensitive structure to form one or more interconnect location openings;
• etching the dielectric layer through the one or more interconnect location openings to form one or more interconnect openings;
• and
• filling the one or more interconnect openings with an electrically conductive material to form one or more interconnects.

A method of at least preparing photobuckets for lithography, the method comprising:

• providing a plurality of photobuckets on a material to be etched;
• providing a layer of a first material at least on side walls of the plurality of photobuckets;
• and
• filling the plurality of photobuckets layered with the first material with a second material, wherein:
• the first material is not lithosensitive while the second material is lithosensitive, or
• the first material comprises a first lithosensitive material, the second material comprises a second lithosensitive material, and the second photosensitive material is more lithosensitive than the first lithosensitive material.

An assembly for forming nanostructures, the assembly comprising:

• a material to be etched;
• and
• a non-lithosensitive structure provided over the material to be etched, the structure comprising a plurality of openings extending in a direction that is substantially perpendicular to the material to be etched,
• the plurality of openings having a layer of a first material and a layer of a second material provided at least on side walls of the plurality of openings, the layer of the first material being provided closer to the side walls of the plurality of openings than the layer of the second material, wherein the second material is more lithosensitive than the first material.