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US 2018/0294166 A1Published application
Gapfill Using Reactive Anneal
AssigneeApplied Materials, Inc.
InventorsAbhijit Basu Mallick, Pramit Manna, Shishi Jiang
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Abstract
Methods for seam-less gapfill comprising forming a flowable film by PECVD, annealing the flowable film with a reactive anneal to form an annealed film and curing the flowable film or annealed film to solidify the film. The flowable film can be formed using a higher order silane and plasma. The reactive anneal may use a silane or higher order silane. A UV cure, or other cure, can be used to solidify the flowable film or the annealed film.
Claims20
A processing method comprising:
- providing a substrate surface having at least one feature thereon, the at least one feature extending a depth from the substrate surface to a bottom surface, the at least one feature having a width defined by a first sidewall and a second sidewall;
- forming a flowable film on the substrate surface and the first sidewall, second sidewall and bottom surface of the at least one feature, the flowable film filling the feature with substantially no seam formed;
- and
- annealing the flowable film to form an annealed film;
- and
- curing the annealed film to solidify the film and form a substantially seam-free gapfill.
3 more elements
A processing method comprising:
- providing a substrate surface having at least one feature thereon, the at least one feature extending a depth from the substrate surface to a bottom surface, the at least one feature having a width defined by a first sidewall and a second sidewall and an aspect ratio greater than or equal to about 25:1;
- forming a flowable silicon film by PECVD on the substrate surface and the first sidewall, second sidewall and bottom surface of the at least one feature, the flowable film filling the feature with substantially no seam formed;
- annealing the flowable film with a post-treatment process to form an annealed film;
- and
- curing the annealed film to solidify the film and form a substantially seam-free gapfill.
2 more elements
A processing method comprising:
- providing a substrate surface having at least one feature thereon, the at least one feature extending a depth from the substrate surface to a bottom surface, the at least one feature having a width defined by a first sidewall and a second sidewall and an aspect ratio greater than or equal to about 25:1;
- forming a flowable silicon film by a PECVD process on the substrate surface and the first sidewall, second sidewall and bottom surface of the at least one feature, the flowable film filling the feature with substantially no seam formed, the PECVD process comprises a polysilicon precursor and a plasma comprising a plasma gas, the polysilicon precursor comprising one or more of disilane, trisilane, tetrasilane, neopentasilane or cyclohexasilane, the plasma gas comprises one or more of He, Ar, Kr, H2, N2, O2, O3 or NH3, the plasma has a power less than or equal to about 200 W, and the PECVD process occurs at a temperature less or equal to about 100° C.;
- exposing the flowable film to a post-treatment process to form an annealed film, the post-treatment process comprising an anneal reactant at an anneal temperature and anneal pressure, the anneal reactant comprising one or more of silane or disilane, the anneal temperature in the range of about 100° C. to about 400° C., and the anneal pressure in the range of about 100 T to about 500 T;
- and
- exposing the annealed film to a UV cure to solidify the film and form a substantially seam-free gapfill.
2 more elements
Dependencies are inferred from the claim text.