Barrier film deposition and treatment

A method for processing an atomic layer deposition (ALD) film on a substrate using an integrated tool, comprising:

• depositing an ALD film on a substrate in an ALD process chamber;
• transferring the substrate to a physical vapor deposition (PVD) process chamber without a vacuum break;
• pressurizing the PVD process chamber to a pressure greater than zero and less than about 10 mTorr;
• doping the ALD film with a first material and a second material simultaneously;
• and
• etching the ALD film with at least one gas while doping the ALD film with the first material and the second material.

An apparatus for film deposition on a substrate, comprising:

• a process chamber having an interior volume with a substrate support, a target, and an inductive coil located between the substrate support and the target;
• a gas supply fluidly coupled to the interior volume of the process chamber that provides an etching gas;
• a first power supply interacting with the substrate support to supply an RF power at a first frequency;
• a second power supply interacting with the inductive coil to supply a first DC power and an RF power at a second frequency less than the first frequency;
• a third power supply interacting with the target to supply a second DC power;
• and
• a controller that adjusts a first RF power level of the first power supply, a second RF power level of the second power supply, a first DC power level of the second power supply, and a second DC power level of the third power supply while sputtering the target or inductive coil and while regulating a flow of the etching gas into the interior volume of the process chamber.