Semiconductor on insulator substrate

A process comprising:

• forming a layer consisting essentially of aluminum nitride on a first wafer, wherein the first wafer includes a substrate;
• bonding a second wafer to the first wafer, wherein the layer consisting essentially of aluminum nitride is interposed between the substrate and the second wafer after the bonding step;
• and
• separating the first and second wafers to form a semiconductor on insulator wafer;
• wherein, during the separating step, the semiconductor on insulator wafer receives a layer of semiconductor material from the second wafer;
• and
• wherein, after the separating step, the semiconductor on insulator wafer includes the layer of semiconductor material, the layer consisting essentially of aluminum nitride, and the substrate.

A semiconductor on insulator wafer comprising:

• a layer of device quality silicon that is less than 1 micrometer thick;
• a layer of silicon dioxide that is under 50 nanometers thick located under the layer of device quality silicon and in contact with the layer of device quality silicon;
• a layer of aluminum nitride that is 1 micrometer to 4 micrometers thick under the layer of silicon dioxide and in contact with the layer of silicon dioxide;
• and
• a substrate of silicon located below the layer of aluminum nitride;
• wherein a mean crystal size in the aluminum nitride layer is greater than 100 nanometers.

A semiconductor on insulator wafer comprising:

• a layer of device quality silicon that is less than 1 micrometer thick;
• a layer of aluminum nitride that is 1 micrometer to 4 micrometers thick under the layer of device quality silicon and in contact with the layer of device quality silicon;
• and
• a substrate of silicon located below the layer of aluminum nitride;
• wherein a mean crystal size in the aluminum nitride layer is greater than 100 nanometers.