Process for obtaining semiconductor nanodevices with patterned metal-oxide thin films deposited onto a substrate, and semiconductor nanodevices thereof

A process for obtaining a semiconductor nanodevice comprising a substrate onto which patterned metal-oxide thin films having semiconductor properties are deposited, said process comprising the steps of:

• preparing a metal oxide chelate solution by complexing metal oxide precursors with a ligand in an alcoholic solvent for obtaining a metal oxide chelate;
• wherein the ligand is methacrylic acid;
• and wherein the metal oxide precursors comprise metal elements selected from the group consisting of zirconium (Zr), titanium (Ti), zinc (Zn), and mixtures thereof;
• preparing a metal oxo-cluster solution by submitting the metal oxide chelate solution to water hydrolysis, for obtaining a partially-condensed metal oxide chelate;
• preparing a doped-metal oxide solution by doping the metal oxo-cluster solution with a doping material comprising a metal element;
• depositing the doped-metal oxide solution onto a substrate, for obtaining a substrate coated with a metal oxide thin film;
• patterning the coated substrate by irradiating it with deep ultra-violet (DUV) wavelengths, for obtaining a patterned coating;
• wherein the coated substrate is irradiated via a laser emitting DUV wavelengths;
• immersing the substrate comprising a patterned coating into a development media, for obtaining a developed patterned substrate;
• post-annealing the developed patterned substrate, for obtaining a fully inorganic patterned substrate.