Atomic layer deposition sealing integration for nanosheet complementary metal oxide semiconductor with replacement spacer
AssigneeInternational Business Machines Corporation
InventorsBruce B. Doris, Michael A. Guillorn, Isaac Lauer, Xin Miao
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Abstract
A semiconductor device including a gate structure present on at least two suspended channel structures, and a composite spacer present on sidewalls of the gate structure. The composite spacer may include a cladding spacer present along a cap portion of the gate structure, and an inner spacer along the channel portion of the gate structure between adjacent channel semiconductor layers of the suspended channel structures. The inner spacer may include a crescent shape with a substantially central seam.
Claims20
A method of forming a semiconductor device comprising:
- forming a gate sidewall spacer on a stack of at least two semiconductor materials;
- etching the stack of at least two semiconductor materials with an etch process that etches at least one semiconductor material in the stack at a faster rate than remaining semiconductor materials of the at least two semiconductor materials in the stack to form a divot underlying the gate sidewall spacer;
- and
- filling the divot.
A semiconductor device comprising:
- a gate structure on a suspended channel structure;
- and
- a composite spacer present on sidewalls of the gate structure, the composite spacer comprising an inner spacer having a crescent shape along the channel portion of the suspended channel structure.
Dependencies are inferred from the claim text.