Plasma processing apparatus

A plasma processing apparatus of exciting a processing gas into plasma by applying a high frequency power between an upper electrode and a lower electrode provided within a processing chamber and performing a plasma process on a target object to be processed with the plasma, the plasma processing apparatus comprising:

• a DC power supply configured to apply a DC voltage to the upper electrode;
• a ground electrode, provided within the processing chamber, configured to serve as a ground with respect to the DC voltage applied to the upper electrode;
• and
• an annular shield member provided outside the ground electrode,
• wherein a groove is formed into a downward recess with a first peripheral portion at an outer peripheral portion of the ground electrode,
• an upper end of the shield member is positioned above an upper end of the first peripheral portion of the ground electrode, and
• a protruding portion, which is protruded toward a center of the ground electrode, is formed at a portion of the shield member positioned above the ground electrode,
• wherein a region, at which the groove has a width larger than other regions thereof, is formed in the groove.