High deposition rate high quality silicon nitride enabled by remote nitrogen radical source

A substrate processing system, comprising:

• a plasma source unit, comprising:
• a lid;
• and
• a dual channel gas distribution plate disposed below the lid, the dual channel gas distribution plate having:
• a first set of channels that traverse the thickness of the dual channel gas distribution plate, wherein the first set of channels is arranged across the diameter of the dual channel gas distribution plate;
• and
• a second set of channels disposed within the dual channel gas distribution plate, wherein the second set of channels traverse a portion of the thickness of the dual channel gas distribution plate;
• a pedestal disposed below the dual channel gas distribution plate, wherein the pedestal and the dual channel gas distribution plate define a plasma excitation region therebetween;
• a first remote plasma source (RPS) unit having a first gas outlet coupled to a first gas inlet disposed at the lid, wherein the first gas outlet is in fluid communication with the plasma excitation region;
• and
• a second RPS unit having a second gas outlet coupled to a second gas inlet disposed at the lid, wherein the second gas outlet is in fluid communication with the plasma excitation region, and the second RPS unit has an ion filter disposed between the second gas outlet and the second gas inlet of the lid.

A substrate processing system, comprising:

• a lid;
• a gas distribution plate disposed relatively below the lid, the gas distribution plate having a plurality of through holes arranged across the diameter of the gas distribution plate;
• an ion suppression element disposed relatively below the gas distribution plate, the ion suppression element having a plurality of through holes each having a tapered portion and a cylindrical portion, wherein the ion suppression element and the gas distribution plate define a first plasma excitation region;
• a dual channel gas distribution plate disposed relatively below the ion suppression element, the dual channel gas distribution plate having:
• a first set of channels that traverse the thickness of the dual channel gas distribution plate, wherein the first set of channels is arranged across the diameter of the dual channel gas distribution plate;
• and
• a second set of channels disposed within the dual channel gas distribution plate, wherein the second set of channels traverse a portion of the thickness of the dual channel gas distribution plate;
• a plasma suppressor disposed between the ion suppression element and the dual channel gas distribution plate, wherein the plasma suppressor has a plurality of through holes disposed across the diameter of the plasma suppressor;
• a pedestal disposed below the dual channel gas distribution plate, wherein the pedestal and the dual channel gas distribution plate define a second plasma excitation region therebetween;
• a first gas source coupled to a first gas inlet disposed at the lid, wherein the first gas inlet is in fluid communication with the first plasma excitation region;
• and
• a second gas source coupled to a second gas inlet disposed at a sidewall of the substrate processing system.